Decoding the mechanism of the mechanical transfer of a GaN-based heterostructure via an h-BN release layer in a device configuration
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چکیده
Articles you may be interested in Single crystalline Sc 2 O 3 / Y 2 O 3 heterostructures as novel engineered buffer approach for GaN integration on Si (111) Growth of high crystalline quality semi-insulating GaN layers for high electron mobility transistor applications Growth stresses and cracking in GaN films on (111) Si grown by metal-organic chemical-vapor deposition. I. AlN buffer layers
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